Flash memory cell and associated high voltage row decoder

ABSTRACT

The present invention relates to a flash memory cell with only four terminals and a high voltage row decoder for operating an array of such flash memory cells. The invention allows for fewer terminals for each flash memory cell compared to the prior art, which results in a simplification of the decoder circuitry and overall die space required per flash memory cells. The invention also provides for the use of high voltages on one or more of the four terminals to allow for read, erase, and programming operations despite the lower number of terminals compared to prior art flash memory cells.

PRIORITY CLAIM

This application is a divisional of U.S. patent application Ser. No.16/879,663, filed on May 20, 2020, and titled, “Flash Memory Cell andAssociated High Voltage Row Decoder,” which is a divisional of U.S.patent application Ser. No. 15/924,100, filed on Mar. 16, 2018, titled“Flash Memory Cell and Associated Decoders,” and issued as U.S. Pat. No.10,741,265 on Aug. 11, 2020, which is a divisional of U.S. patentapplication Ser. No. 15/158,460, filed on May 18, 2016, titled, “FlashMemory Cell And Associated Decoders,” and issued as U.S. Pat. No.9,953,719 on Apr. 24, 2018, all of which are incorporated by referenceherein.

TECHNICAL FIELD

The present invention relates to a flash memory cell with only fourterminals and decoder circuitry for operating an array of such flashmemory cells. The invention allows for fewer terminals for each flashmemory cell compared to the prior art, which results in a simplificationof the decoder circuitry and overall die space required per flash memorycells. The invention also provides for the use of high voltages on oneor more of the four terminals to allow for read, erase, and programmingoperations despite the lower number of terminals compared to prior artflash memory cells.

BACKGROUND OF THE INVENTION

Non-volatile memory cells are well known in the art. One prior artnon-volatile split gate memory cell 10, which contains five terminals,is shown in FIG. 1. Memory cell 10 comprises semiconductor substrate 12of a first conductivity type, such as P type. Substrate 12 has a surfaceon which there is formed a first region 14 (also known as the sourceline SL) of a second conductivity type, such as N type. A second region16 (also known as the drain line) also of N type is formed on thesurface of substrate 12. Between the first region 14 and the secondregion 16 is channel region 18. Bit line BL 20 is connected to thesecond region 16. Word line WL 22 is positioned above a first portion ofthe channel region 18 and is insulated therefrom. Word line 22 haslittle or no overlap with the second region 16. Floating gate FG 24 isover another portion of channel region 18. Floating gate 24 is insulatedtherefrom, and is adjacent to word line 22. Floating gate 24 is alsoadjacent to the first region 14. Floating gate 24 may overlap the firstregion 14 to provide coupling from the first region 14 into floatinggate 24. Coupling gate CG (also known as control gate) 26 is overfloating gate 24 and is insulated therefrom. Erase gate EG 28 is overthe first region 14 and is adjacent to floating gate 24 and couplinggate 26 and is insulated therefrom. The top corner of floating gate 24may point toward the inside corner of the T-shaped erase gate 28 toenhance erase efficiency. Erase gate 28 is also insulated from the firstregion 14. Memory cell 10 is more particularly described in U.S. Pat.No. 7,868,375, whose disclosure is incorporated herein by reference inits entirety.

One exemplary operation for erase and program of prior art non-volatilememory cell 10 is as follows. Memory cell 10 is erased, through aFowler-Nordheim tunneling mechanism, by applying a high voltage on erasegate 28 with other terminals equal to zero volt. Electrons tunnel fromfloating gate 24 into erase gate 28 causing floating gate 24 to bepositively charged, turning on the cell 10 in a read condition. Theresulting cell erased state is known as ‘1’ state.

Memory cell 10 is programmed, through a source side hot electronprogramming mechanism, by applying a high voltage on coupling gate 26, ahigh voltage on source line 14, a medium voltage on erase gate 28, and aprogramming current on bit line 20. A portion of electrons flowingacross the gap between word line 22 and floating gate 24 acquire enoughenergy to inject into floating gate 24 causing the floating gate 24 tobe negatively charged, turning off the cell 10 in a read condition. Theresulting cell programmed state is known as ‘0’ state.

Memory cell 10 is read in a Current Sensing Mode as following: A biasvoltage is applied on bit line 20, a bias voltage is applied on wordline 22, a bias voltage is applied on coupling gate 26, a bias or zerovoltage is applied on erase gate 28, and a ground is applied on sourceline 14. There exists a cell current flowing from bit line 20 to sourceline 14 for an erased state and there is insignificant or zero cellcurrent flow from the bit line 20 to the source line 14 for a programmedstate. Alternatively, memory cell 10 can be read in a Reverse CurrentSensing Mode, in which bit line 20 is grounded and a bias voltage isapplied on source line 24. In this mode the current reverses thedirection from source line 14 to bitline 20.

Memory cell 10 alternatively can be read in a Voltage Sensing Mode asfollowing: A bias current (to ground) is applied on bit line 20, a biasvoltage is applied on word line 22, a bias voltage is applied oncoupling gate 26, a bias voltage is applied on erase gate 28, and a biasvoltage is applied on source line 14. There exists a cell output voltage(significantly >0V) on bit line 20 for an erased state and there isinsignificant or close to zero output voltage on bit line 20 for aprogrammed state. Alternatively, memory cell 10 can be read in a ReverseVoltage Sensing Mode, in which bit line 20 is biased at a bias voltageand a bias current (to ground) is applied on source line 14. In thismode, memory cell 10 output voltage is on the source line 14 instead ofon the bit line 20.

In the prior art, various combinations of positive or zero voltages wereapplied to word line 22, coupling gate 26, and floating gate 24 toperform read, program, and erase operations

In response to the read, erase or program command, the logic circuit 270(in FIG. 2) causes the various voltages to be supplied in a timely andleast disturb manner to the various portions of both the selected memorycell 10 and the unselected memory cells 10.

For the selected and unselected memory cell 10, the voltage and currentapplied are as follows. As used hereinafter, the following abbreviationsare used: source line or first region 14 (SL), bit line 20 (BL), wordline 22 (WL), and coupling gate 26 (CG).

TABLE NO. 1 PEO (Positive Erase Operation) Table WL- BL- CG-unsel CG -EG- WL unsel BL unsel CG same sector unsel EG unsel SL Sl-unsel Read1.0- 0 V 0.6-2 V 0 V-  0-2.6 V 0-2.6 V 0-   0-2.6 V 0-2.6 V 0 V 0 V-FLT2 V FLT 2.6 V Erase 0 V 0 V 0 V 0 V 0 V 0-2.6 V 0- 11.5-12 V 0-2.6 V 0 V0 V 2.6 V Program 1 V 0 V 1 uA Vinh 10-11 V 0-2.6 V 0-  4.5-5 V 0-2.6 V4.5-5 V 0- 2.6 V 1 V/FLT

In a recent application by the applicant—U.S. patent application Ser.No. 14/602,262, filed on Jan. 21, 2015, which is incorporated byreference—the applicant disclosed an invention whereby negative voltagescould be applied to word line 22 and/or coupling gate 26 during read,program, and/or erase operations. In this embodiment, the voltage andcurrent applied to the selected and unselected memory cell 10, are asfollows.

TABLE NO. 2 PEO (Positive Erase Operation) Table WL- BL- CG-unsel CG-EG- WL unsel BL unsel CG same sector unsel EG unsel SL SL-unsel Read1.0-2 V −0.5 V/ 0.6-2 V 0 V-  0-2.6 V 0-2.6 V 0-   0-2.6 V 0-2.6 V 0 V 0V-FLT 0 V FLT 2.6 V Erase 0 V 0 V 0 V 0 V 0 V 0-2.6 V 0- 11.5-12 V 0-2.6V 0 V 0 V 2.6 V Program 1 V −0.5 V/ 1 uA Vinh 10-11 V 0-2.6 V 0-  4.5-5V 0-2.6 V 4.5-5 V 0- 0 V 2.6 V 1 V/FLT

In another embodiment of U.S. patent application Ser. No. 14/602,262,negative voltages can be applied to word line 22 when memory cell 10 isunselected during read, erase, and program operations, and negativevoltages can be applied to coupling gate 26 during an erase operation,such that the following voltages are applied:

TABLE NO. 3 PNEO (Positive Negative Erase Operation) Table WL- BL-CG-unsel CG- EG- WL unsel BL unsel CG same sector unsel EG unsel SLSL-unsel Read 1.0-2 V −0.5 V/0 V 0.6-2 V 0-FLT   0-2.6 V  0-2.6 V 0-2.6V 0-2.6 V 0-2.6 V 0 V 0-FLT Erase 0 V −0.5 V/0 V 0 V 0-FLT −(5-9) V 0-2.6 V 0-2.6 V 8-9 V 0-2.6 V 0 V 0 V Program 1 V −0.5 V/0 V 1 uA Vinh  8-9 V CGINH 0-2.6 V 8-9 V 0-2.6 V 4.5-5 V 0- (4-6 V) 1 V/FLT

The CGINH signal listed above is an inhibit signal that is applied tothe coupling gate 26 of an unselected cell that shares an erase gate 28with a selected cell.

FIG. 2 depicts an embodiment recently developed by applicant of anarchitecture for a flash memory system comprising die 200. Die 200comprises: memory array 215 and memory array 220 for storing data,memory arrays 215 and 220 comprising rows and columns of memory cells ofthe type described previously as memory cell 10 in FIG. 1, pad 240 andpad 280 for enabling electrical communication between the othercomponents of die 200 and, typically, wire bonds (not shown) that inturn connect to pins (not shown) or package bumps that are used toaccess the integrated circuit from outside of the packaged chip or macrointerface pins (not shown) for interconnecting to other macros on a SOC(system on chip); high voltage circuit 275 used to provide positive andnegative voltage supplies for the system; control logic 270 forproviding various control functions, such as redundancy and built-inself-testing; analog circuit 265; sensing circuits 260 and 261 used toread data from memory array 215 and memory array 220, respectively; rowdecoder circuit 245 and row decoder circuit 246 used to access the rowin memory array 215 and memory array 220, respectively, to be read fromor written to; column decoder circuit 255 and column decoder circuit 256used to access bytes in memory array 215 and memory array 220,respectively, to be read from or written to; charge pump circuit 250 andcharge pump circuit 251, used to provide increased voltages for programand erase operations for memory array 215 and memory array 220,respectively; negative voltage driver circuit 230 shared by memory array215 and memory array 220 for read and write operations; high voltagedriver circuit 225 used by memory array 215 during read and writeoperations and high voltage driver circuit 226 used by memory array 220during read and write operations.

With flash memory systems becoming ubiquitous in all manner of computingand electronic devices, it is increasingly important to create designsthat reduce the amount of die space required per memory cell and toreduce the overall complexity of decoders use in flash memory systems.What is needed is flash memory cell design that utilizes fewer terminalsthan in the prior art and simplified circuitry for operating flashmemory cells that follow that design.

SUMMARY OF THE INVENTION

The present invention relates to a flash memory cell with only fourterminals and decoder circuitry for operating an array of such flashmemory cells. The invention allows for fewer terminals for each flashmemory cell compared to the prior art, which results in a simplificationof the decoder circuitry and overall die space required per flash memorycells. The invention also provides for the use of high voltages on oneor more of the four terminals to allow for read, erase, and programmingoperations despite the lower number of terminals compared to prior artflash memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a non-volatile memory cell of theprior art to which the method of the present invention can be applied.

FIG. 2 is a block diagram of a non-volatile memory device using thenon-volatile memory cell of the prior art shown in FIG. 1.

FIG. 3 is a block diagram of an embodiment of a non-volatile memorycell.

FIG. 4 is a schematic representation of the non-volatile memory cell ofFIG. 3.

FIG. 5 is a block diagram of a non-volatile memory device using thenon-volatile memory cell of FIG. 3.

FIG. 6 depicts an embodiment of a row decoder for use with the memorydevice of FIG. 5.

FIG. 7 is a block diagram of decoder circuitry for use with the memorydevice of FIG. 5.

FIG. 8 depicts an embodiment of an erase gate decoder for use with thememory device of FIG. 5.

FIG. 9 depicts an embodiment of an erase gate decoder for use with thememory device of FIG. 5.

FIG. 10 depicts an embodiment of an erase gate decoder for use with thememory device of FIG. 5.

FIG. 11 depicts an embodiment of a source line decoder for use with thememory device of FIG. 5.

FIG. 12 depicts an embodiment of a source line decoder for use with thememory device of FIG. 5.

FIG. 13 depicts an embodiment of a source line decoder for use with thememory device of FIG. 5.

FIG. 14 depicts an embodiment of a source line decoder for use with thememory device of FIG. 5.

FIG. 15 depicts an embodiment of a source line decoder with a dummyflash memory cell for selectively pulling down to a low voltage orground a source line.

FIG. 16 depicts an embodiment of a dummy flash memory cell forselectively pulling down to a low voltage or ground a source linecoupled to a selected flash memory cell.

FIG. 17 depicts an embodiment of a control gate decoder for use with amemory device using the memory cell of FIG. 1.

FIG. 18 depicts an embodiment of a control gate decoder for use with amemory device using the memory cell of FIG. 1.

FIG. 19 depicts an embodiment of a gate decoder for use with a memorydevice using the memory cell of FIG. 1.

FIG. 20 depicts an embodiment of a latch voltage level shifter for usewith the memory device of FIG. 5.

FIG. 21 depicts an embodiment of a latch voltage level shifter for usewith the memory device of FIG. 5.

FIG. 22 depicts an embodiment of a high voltage current limiter for usewith the memory device of FIG. 5.

FIG. 23 depicts an embodiment of a latch voltage level shifter for usewith the memory device of FIG. 5.

FIG. 24 depicts an embodiment of an array of flash memory cells with acolumn of dummy memory cells for selectively pulling down to a lowvoltage or ground a selected source line.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 3 depicts an embodiment of an improved flash memory cell 300. Aswith prior art flash memory cell 10, flash memory cell 300 comprisessubstrate 12, first region (source line) 14, second region 16, channelregion 18, bit line 20, word line 22, floating gate 24, and erase gate28. Unlike prior art flash memory cell 10, flash memory cell 300 doesnot contain a coupling gate or control gate and only contains fourterminals—bit line 20, word line 22, erase gate 28, and source line 14.This significantly reduces the complexity of the circuitry, such asdecoder circuitry, required to operate an array of flash memory cells.

The erase operation (erasing through erase gate) and read operation aresimilar to that of the FIG. 1 except there is no control gate bias. Theprogramming operation also is done without the control gate bias, hencethe program voltage on the source line is higher to compensate for lackof control gate bias.

Table No. 4 depicts typical voltage ranges that can be applied to thefour terminals for performing read, erase, and program operations:

TABLE NO. 4 Four Terminal Flash Device Operation Table WL- BL- WL unselBL unsel EG EG-unsel SL SL-unsel Read 0.7-2.2 V -0.5 V/0 V 0.6-2 V 0V/FLT 0-2.6 V 0-2.6 V 0 V 0 V/FLT/ VB Erase −0.5 V/0 V  −.5 V/0 V 0 V 0V 11.5 V 0-2.6 V 0 V 0 V Program   1-1.5 V  −.5 V/0 V   1-3 μA Vinh  4.5V 0-2.6 V 7-9 V 0-1 V/FLT (~1.8 V)

FIG. 4 depicts a symbolic representation 400 of flash memory cell 300.Symbolic representation 400 comprises symbols for the four terminals offlash memory cell 300, namely, bit line 20, word line 22, erase gate 28,and source line 14.

FIG. 5 depicts an embodiment of an architecture for a flash memorysystem comprising die 500. Die 500 comprises memory arrays 501, 511,521, and 531, for storing data, each of memory arrays 501, 511, 521, and531 comprising rows and columns of memory cells of the type describedpreviously as flash memory cell 300 in FIG. 3. Die 500 further comprisessensing circuit 543 used to read data from memory arrays 501, 511, 521,and 531; row decoder circuit 541 used to access the selected row inmemory arrays 501 and 511 and row decoder circuit 542 used to access theselected row in memory arrays 521 and to be read from or written to;column decoder circuits 503, 513, 523, and 533 used to access bytes inmemory arrays 501, 511, 521, and 531, respectively, to be read from orwritten to; high voltage row decoder WSHDR 502, 512, 522, and 532 usedto provide high voltage to one or more terminals of the selected memorycell within memory arrays 501, 511, 521, and 531, respectively,depending on the operation being performed.

Die 500 further comprises the following functional structures andsub-systems: macro interface pins ITFC pin 548 for interconnecting toother macros on a SOC (system on chip); low voltage generation(including a low voltage charge pump circuit) circuits 547 and highvoltage generation (including a high voltage charge pump circuit)circuit 546 used to provide increased voltages for program and eraseoperations for memory arrays 501, 511, 521, and 531; analog circuit 544used by analog circuitry on die 500; digital logic circuit 545 used bydigital circuitry on die 500.

FIG. 6 depicts row decoder 600 for 8 word lines in a sector within amemory array (such as memory array 501, 511, 521, and 531). Row decoder600 can be part of row decoder circuits 541 and 542 in die 500. Rowdecoder 600 comprises NAND gate 601, which receives pre-decoded addresssignals, here shown as lines XPA, XPB, XPC, and XPD, which select asector within a memory array. When XPA, XPB XPC, and XPD are all “high,”then the output of NAND gate 601 will be “low” and this particularsector will be selected.

Row decoder 600 further comprises inverter 602, decoder circuit 610 togenerate word line WL0, decoder circuit 620 to generate WL7, as well asadditional decoder circuits (not shown) to generate word lines WL1, WL2,WL3, WL4, WL5, and WL6.

Decoder circuit 610 comprises PMOS transistors 611, 612, and 614 andNMOS transistors 613 and 615, configured as shown. Decoder circuit 610receives the output of NAND gate 601, the output of inverter 602, andpre-decoded address signal XPZB0. When this particular sector isselected and XPZB0 is “low,” then WL0 will be asserted. When XPZB0 is“high,” then WL0 will not be asserted.

Similarly, decoder circuit 620 comprises PMOS transistors 621, 622, and624 and NMOS transistors 623 and 625, configured as shown. Decodercircuit 620 receives the output of NAND gate 601, the output of inverter602, and pre-decoded address signal XPZ70. When this particular sectoris selected and XPZB7 is “low,” then WL7 will be asserted. When XPZB7 is“high,” then WL7 will not be asserted.

It is to understood that the decoder circuits (now shown) for WL1, WL2,and WL3, WL4, WL5, and WL6 will follow the same design as decodercircuits 610 and 620 except that they will receive the inputs XPZB1,XPZB2, XPZB3, XPZB4, XPZB5, and XPZB6, respectively, instead of XPZB0 orXPZB7.

In the situation where this sector is selected and it is desired for WL0to be asserted, the output of NAND gate 601 will be “low,” and theoutput of inverter will be “high.” PMOS transistor 611 will be turnedon, and the node between PMOS transistor 612 and NMOS transistor 613will receive the value of XPZB0, which will be “low” when word line WL0is to be asserted. This will turn on PMOS transistor 614, which willpull WL0 “high” to ZVDD which indicates an asserted state. In thisinstance, XPZB7 is “high,” signifying that WL7 is to be not asserted,which will pull the node between PMOS transistor 622 and NMOS transistor623 to the value of XPZB7 (which is “high”), which will turn on NMOStransistor 624 and cause WL to be “low,” which indicates a non-assertedstate. In this manner, one of the word lines WL0 . . . WL7 can beselected when this sector is selected.

FIG. 7 depicts high voltage row decoder 700. It will be recalled that inthe embodiments of this invention, high voltage signals (e.g., 7-9V forthe source line during a programming operation) are required tocompensate for the lack of a coupling gate in the flash memory cells.High voltage decoder 700 comprises high voltage level shift enablecircuit 710, erase gate decoder 720, and source line decoder 730.

High voltage level shift enable circuit 710 comprises high voltage levelshift circuit 711 and low voltage latch 712. Low voltage latch 712receives word line (WL), enable (EN), and reset (RST) as input signalsand outputs sector enable signal (SECEN) and sector enable signal bar(SECEN_N). Sector enable signal (SECEN) is provided as an input to highvoltage level shift circuit 711, which outputs sector enable signal highvoltage (SECEN_HV0 . . . SECEN_HVN for N sectors) and sector enablesignal high voltage bar (SECEN_HV0_N . . . SECEN_HVN _N for N sectors).

Erase gate decoder 720 comprises erase gate decoder 721 for row 0 in thesector, and similar erase gate decoders (not shown) for rows 1, . . . ,N in the sector. Here, erase gate decoder 721 receives the sector enablesignal high voltage (SECEN_HV0) from high voltage level shift circuit711, its complement (SECEN_HV0_N), a voltage erase gate supply (VEGSUP),a low voltage erase gate supply (VEGSUP_LOW), sector enable signal(SECEN), and its complement (SECEN_N). Thus, the output EG0 of erasegate decoder 721 can be at one of three different voltage levels:SECEN_HV0 (high voltage), VEGSUP (normal voltage), or VEGSUP_LOW (lowvoltage).

Similarly, source line decoder 730 comprises source line decoder 721 forrow 0 in the sector, and similar source line decoders (not shown) forrows 1, . . . , N in the sector. Here, source line decoder 731 receivessector enable signal high voltage (SECEN_HV0) from high voltage levelshift circuit 711, its complement (SECEN_HV0_N), a voltage source linesupply (VSLSUP), a low voltage source line supply (VSLSUP LOW), sectorenable signal (SECEN), and its complement (SECEN_N). Thus, the outputSL0 of source line decoder 730 can be at one of three different voltagelevels: SECEN_HV0 (high voltage), VSLSUP (normal voltage), or VSLSUP_LOW(low voltage).

FIG. 8 shows erase gate decoder 800, which is an embodiment of erasegate decoder 720. Erase gate decoder 800 comprises NMOS transistor 801and PMOS transistors 802 and 803, configured as shown. PMOS transistor803 is a current limiter with EGHV_BIAS as a current mirror bias level.When this erase gate signal (EG) is to be asserted, EN_HV_N will be low(e.g., 0V or 1.2V or 2.5V), which will turn on PMOS transistor 802 andturn off NMOS transistor 801, which will cause erase gate (EG) to behigh (i.e. =VEGSUP, for example 11.5V). When this erase gate signal (EG)is to be not asserted, EN_HV_N will be high, which will turn off PMOStransistor 802 and turn on NMOS transistor 801, which will cause erasegate (EG) to be low (i.e., =VEGSUP_LOW level, for example 0v or 1.2V or2.5V).

FIG. 9 shows erase gate decoder 900, which another embodiment of erasegate decoder 720. Erase gate decoder 900 comprises NMOS transistor 901and PMOS transistor 902. Erase gate decoder 900 in this example does notcontain a current limiter. When this erase gate signal (EG) is to beasserted, EN_HV_N will be low (e.g., 0V or 1.2V), which will turn onPMOS transistor 902 and turn off NMOS transistor 901, which will causeerase gate (EG) to be high. When this erase gate signal (EG) is to benot asserted, EN_HV_N will be high, which will turn off PMOS transistor902 and turn on NMOS transistor 901, which will cause erase gate (EG) tobe low (e.g., 0V or 1.2V or 2.5V).

FIG. 10 shows erase gate decoder 1000, which is another embodiment oferase gate decoder 720 that uses only PMOS transistors. Erase gatedecoder 1000 comprises PMOS transistors 1001 and 1002, which share acommon well. Erase gate decoder 1000 in this example does not contain acurrent limiter. When this erase gate signal (EG) is to be asserted,EN_HV_N will be low and EN_HV will be high, which will turn on PMOStransistor 1002 and turn off PMOS transistor 1001, which will causeerase gate (EG) to be high. When this erase gate signal (EG) is to benot asserted, EN_HV_N will be low and EN_HV will be high, which willturn off PMOS transistor 1002 and turn on PMOS transistor 1001, whichwill cause erase gate (EG) to be low (e.g., 0V or 1.2V or 2.5V).

FIG. 11 shows source line decoder 1100, which is an embodiment of sourceline decoder 730. Source line decoder 1100 comprises NMOS transistors1101, 1102, 1103, and 1104, configured as shown. NMOS transistor 1101pulls the source line (SL) low during a read operation in response tothe SLRD_EN signal. NMOS transistor 1102 pulls the source line (SL) lowduring a programming operation in response to the SLP_EN signal. NMOStransistor 1103 performs a monitoring function, through output VSLMON.NMOS transistor 1104 provides a voltage to source line (SL) in responseto the EN_HV signal.

FIG. 12 shows source line decoder 1200, which is another embodiment ofsource line decoder 730. Source line decoder 1200 comprises NMOStransistors 1201, 1202, and 1203, configured as shown. NMOS transistor1201 pulls the source line (SL) low during a programming operation inresponse to the SLP_EN signal. NMOS transistor 1202 performs amonitoring function, through output VSLMON. NMOS transistor 1203provides a voltage to source line (SL) in response to the EN_HV signal.

FIG. 13 shows source line decoder 1300, which is another embodiment ofsource line decoder 730. Source line decoder 730 comprises NMOStransistors 1301 and 1302, configured as shown. NMOS transistor 1301pulls the source line (SL) low during a programming operation inresponse to the SLP_EN signal. NMOS transistor 1302 provides a voltageto source line (SL) in response to the EN_HV signal.

FIG. 14 shows source line decoder 1400, which is another embodiment ofsource line decoder 730 that uses only PMOS transistors. Source linedecoder 1400 comprises PMOS transistors 1401, 1402, and 1403, configuredas shown. PMOS transistor 1401 pulls the source line (SL) low during aprogramming operation in response to the EN_HV signal. PMOS transistor1402 performs a monitoring function, through output VSLMON. PMOStransistor 1403 provides a voltage to source line (SL) in response tothe EN_HV_N signal.

FIG. 15 depicts source line decoder 1500, which is another embodiment ofsource line decoder 730 that is a variation of source line decoder 1400in FIG. 14. Source line decoder comprises source line decoder 1400. Thesource line (SL) of source line decoder 1400 is connected to the sourceline 1620 of selected memory cell 1620 and source line 1520 of a dummymemory cell 1510 during read operations. Dummy memory cell 1510 followsthe same construction as selected memory cell 1610, which can be basedon the design of memory cell 300, except that dummy memory cell 1510 isnot used to store data.

FIG. 16 shows additional detail regarding selected memory cell 1620 anddummy memory cell 1520. When selected memory cell 1620 is in read modeor erase mode, source line 1620 and source line 1520 are coupled toground through dummy memory cell 1510 and dummy bitline 1526 which iscoupled to ground. Dummy memory cell 1510 is required to be erasedbefore read operation. This will pull source line 1520 and source line1620 to ground.

When selected memory cell 1610 is in program mode, bitline 1526 iscoupled to an inhibit voltage such as VDD. This will place dummy memorycell 1510 in a program inhibit mode which will maintain dummy memorycell 1520 in am erased state. A plurality of the dummy cells, such asdummy memory cell 1510, can be connected to memory cell 1610 throughtheir source lines to strengthen the pull down of the source line 1620to ground.

FIG. 17 depicts control gate decoder 1700, which is a control gatedecoder that can be used with the prior art design of FIGS. 1-2, andwhich is not needed in the embodiments of FIGS. 3-16. Control gatedecoder 1700 comprises NMOS transistor 1701 and PMOS transistor 1702.NMOS transistor 1701 will pull down the control gate signal (CG) inresponse to the signal EN_HV_N. PMOS transistor 1702 will pull up thecontrol gate signal (CG) in response to the signal EN_HV_N.

FIG. 18 depicts control gate decoder 1800 that uses only PMOStransistors, which is another embodiment of a control gate decoder thatcan be used with the prior art design of FIGS. 1-2, and which is notneeded in the embodiments of FIGS. 3-16. Control gate decoder 1800comprises PMOS transistors 1801 and 1802. PMOS transistor 1801 will pulldown the control gate signal (CG) in response to the signal EN_HV. PMOStransistor 1802 will pull up the control gate signal (CG) in response tothe signal EN_HV_N.

FIG. 19 depicts EG/CG/SL gate decoder 1900, that can be used with theprior art design of FIGS. 1-2, and in the embodiments of FIGS. 3-16,thus showing the amount of space saved through the present invention.Gate decoder 1900 comprises PMOS transistors 1901. PMOS transistor 1901will pull low the gate signal (EG/CG/SL) high in response to the signalEN_HV_N. If EN_HV_N is not asserted, then the value of EG/CG/SL willfloat. The EG/CG/SL gate is pre-charged to a low bias level first beforebeing enabled to a high voltage level.

FIG. 20 depicts latch voltage level shifter 2000 with adaptive highvoltage VH and low VL supplies. Latch voltage level shifter comprises alatch comprising inverters 2001 and 2002 and NMOS transistors 2003,2004, 2005, 2006, and 2007, in the configuration shown. Latch voltagelevel shifter receives input 2012 to reset (input RST_SECDEC) and input2010 to set, meaning enabling, (inputs WL0 and SET_SECDEC) and producesoutput 2020 and 2022. Latch voltage level shifter will adaptively changethe magnitudes of a “high” voltage or a “low” voltage to minimize thevoltage stress. The latch inverters 2001 and 2002 received power supplyhigh VH and power supply low VL. Initially when enabling by the inputs2010/2012, VH is Vdd, e.g. 1.2V, and VL is gnd. Then VH starts to rampup to an intermediate VH level, e.g. 5V. At this VH level, VL then rampsto an intermediate VL level, e.g., 2.5V. After VL reached theintermediate VL level, VH then ramps to final high voltage supply VHVSUPlevel, e.g., 11.5V. At this point, the voltage across the inverters isonly 11.5V-2.5V=9V, hence reducing the voltage stress across them.

FIG. 21 depicts latch voltage shifter 2100. Latch voltage shifter 2100comprises low voltage latch inverter 2109, NMOS transistors 2103, 2104,2107, and 2108, and PMOS transistors 2101, 2102, 2105, and 2106, in theconfiguration shown. Latch voltage shifter 2100 receives EN_SEC as aninput and outputs EN_HV and EN_HV_N, which have a larger voltage swingthan EN_SEC and ground.

FIG. 22 depicts high voltage current limiter 2200, which comprises aPMOS transistor that receives VEGSUP_LOC and outputs VEGSUP with alimited current (acting as a current bias). This circuit can be usedwith the circuits that do not have local current limiter such as in FIG.9,10,17,18,19 to limit current.

FIG. 23 depicts latch voltage shifter 2300 with a current limiter forread operations. Latch voltage shifter 2300 comprises latch voltageshifter 2100 from FIG. 21. It also comprises current limiter 2310comprising PMOS transistor 2301 and current source 2302. Current limiter2310 is connected to current limiter 2310 through switch 2303. Latchvoltage shifter 2100 also is connected to the signal HVSUP_GLB throughswitch 2304. During a read operation, latch voltage level shifter 2100will be connected to current limiter 2310 through switch 2303. Theoutputs (e.g., approximately one Vt threshold voltage below Vdd2.5V) ofthe latch voltage level shifter 2100 control the gate of the EG and CGdecoders as in FIGS. 8,9,10,17,18,19. When not in a read operation,latch voltage level shifter 2100 will be connected to HVSUP_GLB throughswitch 2304.

FIG. 24 depicts an array with source line pulldown 2400, which utilizesthe designs of FIGS. 15 and 16. Array with source line pulldown 2400comprises a plurality of memory cells organized into rows (indicated byword lines WL0, WL7) and columns (indicated by bit lines BL0, . . . ,BL31). An exemplary memory cell pair is memory cell pair 2401, whichcomprises one cell coupled to word line 2402 (WL0) and another cellcoupled to word line 2404 (WL1). The two cells share erase gate 2403(EG0) and source line 2406 (SL0). A column of dummy memory cells also ispresent, here shown attached to bit line BL_PWDN1. An exemplary dummymemory cell pair is dummy memory cell pair 2407, which comprises onecell coupled to word line 2402 (WL0) and another cell coupled to wordline 2404 (WL1). The two cells share erase gate 2403 (EG0) and sourceline 2406 (SL0). The selected memory cells and dummy memory cells can beconfigured during read operations as discussed previously for FIGS. 15and 16.

What is claimed is:
 1. A non-volatile memory device comprising: an arrayof flash memory cells organized in rows and columns, each flash memorycell comprising a bit line terminal, a word line terminal, an erase gateterminal, and a source line terminal; a high voltage circuit forgenerating a high voltage; and a high voltage row decoder comprising anerase gate decoder and a source line decoder, wherein the high voltagerow decoder selects one or more rows in response to select signals andwherein the erase gate decoder applies the high voltage to erase gateterminals of the one or more rows or the source line decoder applies thehigh voltage to source line terminals of the one or more rows; whereinthe erase gate decoder comprises transistors only of a PMOS type and thesource line decoder comprises transistors only of a PMOS type.
 2. Thenon-volatile memory device of claim 1, wherein the erase gate decoderapplies the high voltage to erase gate terminals of the one or more rowsduring an erase operation.
 3. The non-volatile memory device of claim 1,wherein the source line decoder applies the high voltage to source lineterminals of the one or more rows during a program operation.
 4. Thenon-volatile memory device of claim 1, wherein the high voltage circuitcomprises a high voltage level shifter.
 5. The non-volatile memorydevice of claim 4, wherein the high voltage circuit further comprises acurrent limiter.
 6. The non-volatile memory device of claim 1, whereinthe high voltage circuit further comprises a current limiter.
 7. Amethod of operating a non-volatile memory device comprising an array offlash memory cells organized in rows and columns, each flash memory cellcomprising a bit line terminal, a word line terminal, an erase gateterminal, and a source line terminal, the method comprising: generatinga high voltage; selecting one or more rows in response to selectsignals; and performing one of: applying, by an erase gate decoder, thehigh voltage to erase gate terminals of the one or more rows; andapplying, by a source line decoder, the high voltage to source lineterminals of the one or more rows; wherein the erase gate decodercomprises transistors only of a PMOS type and the source line decodercomprises transistors only of a PMOS type.
 8. The method of claim 7,wherein the step of applying, by an erase gate decoder, the high voltageto erase gate terminals of the one or more rows occurs during an eraseoperation.
 9. The method of claim 7, wherein the step of applying, by asource line decoder, the high voltage to source line terminals of theone or more rows occurs during a program operation.
 10. The method ofclaim 7, wherein the generating step is performed by a high voltagecircuit.
 11. The method of claim 10, wherein the high voltage circuitcomprises a high voltage level shifter.
 12. The method of claim 11,wherein the high voltage circuit further comprises a current limiter.13. The method of claim 10, wherein the high voltage circuit furthercomprises a current limiter.